Atomic layer deposition (ALD)

DTU Nanolab currently runs 2 ALD systems.

A thermal ALD (Picosun R200) depositing Al2O3, TiO2, HfO2, ZnO and AZO (Al doped ZnO).
Deposition rates range between around 0,04  to 0,83nm/cycle, deposition temperatures can be as low as 100°C (amorphous TiO2) and up to 350°C (anatase TiO2) dependant on the material and process chosen.
The tool can handle either 1 200mm wafer or up to 5 150mm or 100mm wafers as well as a number of smaller samples (on carriers). A wide range of substrate materials are allowed.

A PEALD (plasma enhance ALD, Picosun R200 Advanced Plasma)
I addition to be able to run most of the above mentioned deposition materials the plasma enhanced allows to deposit AlN and TiN as well as SiO2.
The tool has a single wafer loadlock and can run up to 200mm wafers.