Thermal

Oxide growth
DTU Nanolab features a total of seven ovens where thermal oxidation of silicon can take place.

Dry oxide  is normally grown @ 1100°C to 1150°C in a thickness range from  5nm to 300nm.

Wet oxide is normally grown up to 3µm also @ 1100°C to 1150°C

It will take around 23 hours @ 110°C to grow 3µm of wet oxide.

Dry and wet oxide growth is available for wafer sizes from 50mm to 150mm, batch size is up to 30 wafers per run.

Anneal (furnace)
Up to 50mm, 100mm or 150mm wafers, small samples on a carrier wafer, 900 – 1150°C, wet or dry. Restrictions for certain materials will apply.

Anneal (RTP)
Rapid thermal annealing of Si and III-V samples.
Alloying of materials.
Fast ramping but time limits for temperatures above 700°C
Atmosphere: N2, Ar, Forming Gas (4% H2 in N2),  vacuum
Temperature: up to 1200°C (only for 1 min)
Single wafer up to 200mm.

Boron drive in
Boron Drive-in and Pre-dep horizontal furnace for thermal oxidation of silicon wafers. and boron pre-deposition/doping. Also used for boron drive-in after the pre-deposition or after boron ion implantation.
Wet and dry oxidation.
Temperature: 800 - 1150°C
Atmosphere: N2, O2, water vapor, atmospheric pressure
Clean 100mm Si wafers (RCA clean required) only.
Up to 30 100mm wafers per run.

Phosphorus drive in
Phosphorous Drive-in and Pre-dep horizontal furnace for thermal oxidation of silicon wafers. and Phosphorous pre-deposition/doping. Also used for phosphorous drive-in after the pre-deposition or after phosphorous ion implantation.
Wet and dry oxidation.
Temperature: 800 - 1150°C 
Atmosphere: N2, O2, water vapor, atmospheric pressure
Clean 100mm Si wafers (RCA clean required) only.
Up to 30 100mm wafers per run.

Pyrolysis
Carbonization of organic polymer at high temperature in inert atmosphere.
Dry oxidation of silicon.
Pyrolisis of different resists.
Temperature up to 1100°C
Atmosphere:  N2, O2, H2, vacuum (0,1mbar)
Si, SiO2 substrates or samples, 
Up to 30 wafers (50mm, 100mm, 150mm, 200mm)