Physical vapor deposition (PVD)
A large variety, methods and systems for PVD are available at DTU Nanolab. Many materials can be deposited by sputtering and e-beam deposition. Here is a short description of but 2 of the 9 PVD tools at DTU Nanolab.
E-Beam Evaporator (Temescal)
The tools allows to up to 4 150mm wafers or up to 3 200mm wafers per run. Smaller wafers and samples are possible. Substrate materials include silicon, quarz and pyrex. the machine allows ion cleaning with Ar ions directly prior to deposition as well as modifying the deposition by Ar ion bombardment.
Film thickness is material dependent and ranges from 1nm to 1µm. Deposition rates vary from 0,05nm/s to 1nm/s.
The following materials can be deposited in this tool:
Materials for e-beam evaporation include: Al, Cr, Cu, Ge, Au, Mo, Ni, Nb, Pd, Pt, Ag, Ta, Sn, Ti, W
High Vacuum Cluster sputtering deposition system (Lesker)
The cluster-based multi-chamber high vacuum sputtering deposition system is a robotic cluster tool with two deposition chambers sharing the same distribution transfer station and the load-lock. The tool is to deposit a variety of materials using DC/RF/PulseDC/HIPIMS magnetron sputtering with or without RF substrate bias. Reactive sputtering with N2 or O2 is possible. One chamber of the tool is reserved for oxygen free materials (nitride and metals). Both chambers allow heating of substrates up to 600°C. Deposition rates range from 0,02 to 1nm/s. Materials include but are not limited to SiO2, Si, ITO, Ni, Cu, Al,Ti, BaTiO3, NbTi, …..
Other materials in different tools include NiV alloy, TiW alloy, AlCu, CoFe, CuTi, FeMn, MnIr, NiCo, NiFe, YSZ
E-Beam Evaporator (Temescal)
The tools allows to up to 4 150mm wafers or up to 3 200mm wafers per run. Smaller wafers and samples are possible. Substrate materials include silicon, quarz and pyrex. the machine allows ion cleaning with Ar ions directly prior to deposition as well as modifying the deposition by Ar ion bombardment.
Film thickness is material dependent and ranges from 1nm to 1µm. Deposition rates vary from 0,05nm/s to 1nm/s.
The following materials can be deposited in this tool:
Materials for e-beam evaporation include: Al, Cr, Cu, Ge, Au, Mo, Ni, Nb, Pd, Pt, Ag, Ta, Sn, Ti, W
High Vacuum Cluster sputtering deposition system (Lesker)
The cluster-based multi-chamber high vacuum sputtering deposition system is a robotic cluster tool with two deposition chambers sharing the same distribution transfer station and the load-lock. The tool is to deposit a variety of materials using DC/RF/PulseDC/HIPIMS magnetron sputtering with or without RF substrate bias. Reactive sputtering with N2 or O2 is possible. One chamber of the tool is reserved for oxygen free materials (nitride and metals). Both chambers allow heating of substrates up to 600°C. Deposition rates range from 0,02 to 1nm/s. Materials include but are not limited to SiO2, Si, ITO, Ni, Cu, Al,Ti, BaTiO3, NbTi, …..
Other materials in different tools include NiV alloy, TiW alloy, AlCu, CoFe, CuTi, FeMn, MnIr, NiCo, NiFe, YSZ
