Electron beam lithography (EBL)
DTU Nanolab runs a JEOL JBX-9500FSZ EBL tool with an acceleration voltage of 100kV, a scanning speed of 100MHz and writing field area (without stitching) of 1mm x 1mm. Minimum beam diameter is 4nm (@ 100pA) and stage position accuracy is 0,5nm.
Smallest line width obtained is around 10nm (CSAR resist, 7nm in HSQ).
The beam current ranges from 0,1nA to 60nA.
The tool is equipped with a loader and several cassettes are available (e.g. 6x 50mm wafer, 2x 100mm wafer, 1x 150mm wafer as well as several cassettes for chips). The loader can take up to 10 cassettes.
Smallest line width obtained is around 10nm (CSAR resist, 7nm in HSQ).
The beam current ranges from 0,1nA to 60nA.
The tool is equipped with a loader and several cassettes are available (e.g. 6x 50mm wafer, 2x 100mm wafer, 1x 150mm wafer as well as several cassettes for chips). The loader can take up to 10 cassettes.
